多层纳米结构中的输运-动力学平均场方法-(影印版) 本书特色
本书从介绍器件、强关联电子系统、多层纳米结构入手，讨论了在多层纳米结构中的输运现象，而其贯穿始终的方法是动力学平均场论。具体内容包括利用动力学平均场论来计算电子格林函数、线性响应输运，约瑟夫森结、热电器件等中的输运现象等，*后还讨论了非平衡和非线性响应。本书可以作为相关领域研究生的教材，也可作为科研工作者的参考书。
多层纳米结构中的输运-动力学平均场方法-(影印版) 内容简介
本书是影印英文版物理学专著，原书由世界科技出版社于2006年出版。多层纳米结构中的输运将会是未来极为重要的纳米技术应用，而动力学平均场论正是研究这一过程的手段。本书作者正是这一领域的主要研究者之一，又有丰富的授课经验。因而本书对这一课题作了深入探讨，同时讲解清晰、易于理解。还有，本书为彩色印刷，印制精美，是外观与内容并重的佳作。
多层纳米结构中的输运-动力学平均场方法-(影印版) 目录
preface
acknowledgments
1.introduction to multilayered nanostructures
1.1 thin film growth and multilayered nanostructures
1.2 strongly correlated materials
1.3 the proximity effect
1.4 electronic charge reconstruction at an interface
1.5 roadmap to real-materials calculations
2.dynamical mean-field theory in the bulk
2.1 models of strongly correlated electrons
2.2 second quantization
2.3 imaginary time green's functions
2.4 real time green's functions
2.5 the limit d oo and the mapping onto a time-dependent impurity problem
2.6 impurity problem solvers
2.7 computational algorithms
2.8 linear-response dc-transport in the bulk
2.9 metal-insulator transitions within dmft
2.10 bulk charge and thermal transport
3.dynamical mean-field theory of a multilayered nanostructure
3.1 potthoff-nolting approach to multilayered nanostructures
3.2 quantum zipper algorithm （renormalized perturbation expansion）
3.3 computationalmethods .
3.4 density of states for a nanostructure
3.5 longitudinal charge transport through a nanostructure
3.6 charge reconstruction （schottky barriers）
3.7 longitudinal heat transport through a nanostructure
3.8 superconducting leads and josephson junctions
3.9 finite dimensions and vertex corrections
4.thouless energy and normal-state transport
4.1 heuristic derivation of the generalized thouless energy
4.2 thouless energy in metals
4.3 thouless energy in insulators
4.4 crossover from tunneling to incoherent transport in devices
5.josephson junctions and superconducting transport
5.1 introduction to superconducting electrorucs devices
5.2 superconducting proximity effect
5.3 josephson current
5.4 figure-of-merit for a josephson junction
5.5 effects of temperature
5.6 density of states and andreev bound states
6.thermal transport
6.1 electronic charge reconstruction near a metal-insulator transition
6.2 thermal transport through a barrier near the metal-insulator transition
7.future directions
7.1 spintronics devices
7.2 multiband models for real materials
7.3 nonequilibrium properties
7.4 summary
appendix a problems
bibliography
index
