4．2．5　Exposure ………………………………………………………………………… 92
4．2．6　Development ……………………………………………………………………… 94
4．2．7　Hardening ………………………………………………………………………… 96
4．2．8　FabricationoftheSiO2 window ………………………………………………… 97
4．3　SubsequentprocessofMEMS ……………………………………………………… 98
4．3．1　Bulksilicontechnology ………………………………………………………… 98
4．3．2　Surfacesiliconprocess ………………………………………………………… 103
4．3．3　LIGAtechnology ……………………………………………………………… 104
4．3．4　Sputteringtechnology ………………………………………………………… 105
4．3．5　LiftGoffprocess ………………………………………………………………… 107
4．4　Filmpreparationtechnology………………………………………………………… 107
4．5　Bondingprocess ……………………………………………………………………… 108
4．5．1　Anodicbondingprocess………………………………………………………… 109
4．5．2　SiliconGsilicondirectbonding ………………………………………………… 110
4．5．3　Metaleutecticbonding ………………………………………………………… 113
4．5．4　Coldpressureweldingbonding ……………………………………………… 114
4．6　Engineeringexamplesofcombinationformultipleprocessestofabricatethe
MEMSdevice ………………………………………………………………………… 115
4．6．1　Introduction …………………………………………………………………… 115
4．6．2　EngineeringexampleoffabricationprocessforresonantMEMSgyroscope
…………………………………………………………………………………… 115
4．6．3　EngineeringexampleofelectromagneticmicroGmotorproductionprocess
…………………………………………………………………………………… 118
4．7　Summary ……………………………………………………………………………… 124
References…………………………………………………………………………………… 125
Chapter5　Frictionwearandtearundermicroscale ……………………………………… 126
5．1　OffGchiptestingmethodformicrofriction ………………………………………… 127
5．1．1　MicroGtribologytestwiththepinGonGdiscmeasuringmethod ……………… 127
5．1．2　MicroGtribologytestwithAFM ……………………………………………… 128
5．1．3　MicroGtribologytestwithspecialmeasuringdevice ………………………… 130
5．2　OnGchiptestingmethodformicrofriction ………………………………………… 132
5．2．1　OnGchiptestingmethodactuatedbyelectrostaticforce …………………… 132
5．2．2　OnGchipmicroGfrictiontestingmethodusingthemechanismcharactersof
thebimorphmaterial…………………………………………………………… 139
5．3　ExampleofthedesignforanonGchipmicroGfrictionstructure ………………… 141
5．3．1　Structureandworkingprinciple ……………………………………………… 141
5．3．2　Calculationofpertinenttheory ……………………………………………… 142
5．3．3　Technologicalanalysisofstructuraldesign ………………………………… 148
5．3．4　Testingresultsanddataanalysis……………………………………………… 152
5．3．5　ResearchandtestofwearproblemofMEMSdevices ……………………… 161
5．4　Summary ……………………………………………………………………………… 165
References…………………………………………………………………………………… 165
Chapter6　MEMStestingtechnologyandengineeringapplication ………………………… 169
6．1　Accelerationmeasurementandcorrespondingsensors …………………………… 169
6．1．1　Workingprincipleoftheaccelerationsensorandtheclassification ……… 170
6．1．2　Capacitivesiliconmicromechanicalaccelerometer …………………………… 172
6．1．3　Piezoresistivesiliconmicromechanicalaccelerometer ……………………… 173
6．1．4　Piezoelectricmicromechanicalaccelerometer ………………………………… 174
6．1．5　ResonantsiliconMEMSaccelerometer ……………………………………… 175
6．2　Angularspeedmeasurementandcorrespondingsensors ………………………… 177
6．2．1　Workingprinciple ……………………………………………………………… 177
6．2．2　DevelopmentofMEMSgyroscope …………………………………………… 178
6．2．3　Classificationofmicromechanicalgyroscope ………………………………… 188
6．3　Pressuremeasurementandcorrespondingsensors ……………………………… 190
6．3．1　Workingpincinple ……………………………………………………………… 190
6．3．2　Resonantsiliconmicromechanicalpressuresensoranditsdevelopment … 193
6．4　MeasurementofmicroGtorque ……………………………………………………… 198
6．4．1　Introduction …………………………………………………………………… 198
6．4．2　Workingprincipleofnoncontactmethod …………………………………… 199
6．4．3　Theoreticalcalculation ………………………………………………………… 200
6．4．4　Correspondingequipmenttorealizethenoncontactmethod ……………… 205
6．4．5　Experimentresultanddiscussion …………………………………………… 209

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