半导体物理性能手册-第2卷-(下册) 本书特色

     足立贞夫编著的《半导体物理性能手册(第2卷下 )/springer手册精选原版系列》介绍了各族半导体、化合物半导体的物理性能，包括： structural properties结构特性 thermal properties热学性质 elastic properties弹性性质 phonons and lattice vibronic properties 声子与晶格振动性质 collective effects and related properties集体效应及相关性质 energy-band structure：energy-band gaps 能带结构：能带隙 energy—band structure：electron and hole effective masses能带结构：电子和空穴的有效质量 electronic deformation potential电子形变势 electron affinity and schottky barrier height电子亲和能与肖特基势垒高度 optical properties光学性质 elastooptic，electrooptic， andnonlinearoptical properties弹光、电光和非线性光学性质 carrier transport properties载流子输运性质 《半导体物理性能手册(第2卷下)/springer手册精选原版系列》适用对象包括材料、微电子学、电子科学与技术等专业的本科生和研究生，以及从事半导体研究的专业人员。

半导体物理性能手册-第2卷-(下册) 目录

preface
acknowledgments
contents of other volumes
10 wurtzite gallium nitride (a-gan)
  10.1 structural properties 
    10.1.1 ionicity 
    10.1.2 elemental isotopic abundance and molecular weight 
    10.1.3 crystal structure and space group 
    10.1.4 lattice constant and its related parameters 
    10.1.5 structural phase transition 
    10.1.6 cleavage plane 
  10.2 thermal properties 
    10.2.1 melting point and its related parameters 
    10.2.2 specific heat 
    10.2.3 debye temperature 
    10.2.4 thermal expansion coefficient 
    10.2.5 thermal conductivity and diffusivity 
  10.3 elastic properties 
    10.3.1 elastic constant 
    10.3.2 third-order elastic constant 
    10.3.3 young's modulus, poisson's ratio, and similar 
    10.3.4 microhardness 
    10.3.5 sound velocity 
  10.4 phonons and lattice vibronic properties 
    10.4.1 phonon dispersion relation 
    10.4.2 phonon frequency 
    10.4.3 mode gruneisen parameter 
    10.4.4 phonon deformation potential 
  10.5 collective effects and related properties 
    10.5.1 piezoelectric constant 
    10.5.2 frohlich coupling constant 
  10.6 energy-band structure: energy-band gaps 
    10.6.1 basic properties 
    10.6.2 e0-gap region 
    10.6.3 higher-lying direct gap 
    10.6.4 lowest indirect gap 
    10.6.5 conduction-valley energy separation 
    10.6.6 direct-indirect-gap transition pressure 
  10.7 energy-band structure: electron and hole effective masses 
    10.7.1 electron effective mass: f valley 
    10.7.2 electron effective mass: satellite valley 
    10.7.3 hole effective mass 
  10.8 electronic deformation potential 
    10.8.1 intravalley deformation potential: f point 
    10.8.2 intravalley deformation potential: high-symmetry points 
    10.8.3 intervalley deformation potential 
  10.9 electron affinity and schottky barrier height 
    10.9.1 electron affinity 
    10.9.2 schottky barrier height 
  10.10 optical properties 
    10.10.1 summary of optical dispersion relations 
    10.10.2 the reststrahlen region 
    10.10.3 at or near the fundamental absorption edge 
    10.10.4 the interband transition region 
    10.10.5 free-carrierabsorption and related phenomena 
  10.11 elastooptic, electrooptic, and nonlinear optical properties 

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